MINATEC

Latest technological advances will allow the fabrication of « backend » devices in which elementary storage nodes are included during the final fabrication steps of VLSI circuits (“back-end” integration). The application potentials of these new memories are not limited to ultra-high densities, but also cover embedded applications.

Latest technological advances will allow the fabrication of « backend » devices in which elementary storage nodes are included during the final fabrication steps of VLSI circuits (“back-end” integration). The application potentials of these new memories are not limited to ultra-high densities, but also cover embedded applications. By stacking these emerging memories in the third dimension of CMOS circuit interconnection levels, new functions, based on innovative 3D architectures are made possible. For example: hyper-parallel data transfer (“ultra-high bandwidth”), re-configurable logic circuits and low-power logic. The work of this PhD will be performed at the interface of several LETI activities, focusing on “device technology” and “architecture development”.